METHOD OF IDENTIFYING CRYSTAL DEFECT REGION IN CRYSTALLINE SILICON USING COPPER HAZE AND COPPER SOLUTION FOR IDENTIFYING CRYSTAL DEFECT REGION

摘要

A method for identifying a crystal defect region in a single crystal silicon by using copper haze and a copper contamination liquid are provided to conveniently identify the crystal defect region by remarkably increasing an amount of Cu contamination and then heat-treating a surface of a sample. A sample obtained from one piece of a singly crystal silicon ingot or a silicon wafer is prepared(S22). One surface of the sample is applied by a copper contamination liquid mixed with a buffered oxide etchant liquid and Cu to contaminate the surface, and then is dried(S26). The dried sample is heat-treated, and then the contaminated surface of the sample or an opposite surface of the contaminated surface is visually observed to identify the crystal defect region.