| 摘要 |
A chemical and mechanical polishing apparatus is provided to improve the property of a device by preventing a defect, dishing, and corrosion generated in a chemical and mechanical polishing process. A chemical and mechanical polishing apparatus includes a wafer carrier(55), a rotary axis(56), a platen(52), a supporting axis(51), and first and second supplying units(53,54). The wafer carrier(55) fixes a wafer. The rotary axis(56) is connected to the wafer carrier(55). The platen(52) is rotated to polish the wafer. The supporting axis(51) supports the platen(52). The first and second supplying units(53,54) supply different slurries to the platen(52) when polishing the wafer. The first supplying unit(53) polishes the central area of the wafer by supplying the HSC(High Selectivity Ceria base) slurry.
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