METHOD OF MANUFACTURING A CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a capacitor of a semiconductor device is provided to form a multi-layered dielectric film including a tantalum oxide film having high dielectric constant, thereby securing electrostatic capacity sufficiently. A method for manufacturing a capacitor of a semiconductor device comprises the steps of: forming a lower electrode(110) on a substrate(100); forming a dielectric film(132) on the lower electrode; and forming an upper electrode on the dielectric film(132). The lower electrode(110) is formed by patterning a first conductive film deposited on the substrate(100) using a first photoresist pattern as a mask. The dielectric film(132) is a multi-layered dielectric where a zirconium oxide film(126), a tantalum oxide film(128), and the zirconium oxide film(130) are successively laminated.