| 摘要 |
A thin film deposition apparatus having a gas curtain is provided to improve the quality of the film and maximize the processing efficiency by supplying the inactive gas to the inside of a chamber through dually formed gas curtain holes. A thin film deposition apparatus(100) includes a chamber(110), a susceptor(130), a chamber lead(120), a shower head(140), and a gas curtain(150). The susceptor(130) for mounting a wafer is installed inside the chamber(110). The chamber lead(120) seals the chamber(110) and is positioned an upper side of the susceptor(130). The shower head(140) is installed in the chamber lead(120) and supplies processing gas to the inside of the chamber(110). The gas curtain(150) is installed with a shape surrounding the shower head(140), and comprises a plurality of first gas curtain holes(152) formed in a columnar direction and a plurality of second gas curtain holes(154) formed in the columnar direction inside the first gas curtain holes(152).
|
