| 摘要 |
A chemical vapor deposition apparatus for manufacturing a semiconductor device is provided to offer a voltage and gas uniformly in a processing chamber by installing an upper electrode and a lower electrode in the apparatus individually corresponding to a cell unit and installing a gas inlet in the upper electrode. A chemical vapor deposition apparatus for manufacturing a semiconductor device includes a processing chamber(28) for performing the chemical vapor deposition using the plasma, a stage(21) for supporting a wafer, a lower electrode(22) for applying the voltage to the wafer, an upper electrode(25) for generating the plasma on the chamber, and a gas inlet(27) for supplying the reacting gas. The lower electrode(22) and the upper electrode(25) are equipped with a cell unit individually. The gas inlet(27) is installed between the upper electrodes(25) individually.
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