| 摘要 |
<p>A semiconductor apparatus and a method for manufacturing the same are provided to obtain a high characteristic by restraining the reduction of oxide iridium to prevent porousness. A semiconductor apparatus includes a semiconductor substrate and a capacitor structure. The capacitor structure is formed on the upper part of the semiconductor substrate to have a capacitor film(25) made of dielectric material by lower and upper electrodes. The upper electrode has an iridium oxide film. The surface layer of the iridium oxide film is composed of a high oxidation layer(19) having iridium oxidation higher than a part under the surface layer. The high oxidation layer(19) is crystallized in the composition of IrQ2.</p> |
