| 摘要 |
A method for fabricating a semiconductor and an etching system are provided to obtain desired sparse and dense mask dimensions and a gate electrode dimension with reproducibility by utilizing a difference between critical dimension shifts of a sparse mask and a dense mask. A method for fabricating a semiconductor includes the steps of: performing a lithography process(S1); and introducing a seasoning process(S11S), a depositing process(S2) following the seasoning process(S11S) and using a deposit gas, and a trimming process(S3) before processing a dry etching or introducing the seasoning process(S11S) and the depositing process(S2) following the seasoning process(S11S) and using the deposit gas. In the lithography process(S1), a sparse mask and a dense mask are formed.
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