| 摘要 |
<p>A method for manufacturing a flash memory device is provided to improve the property of the flash memory device by preventing a hump phenomenon in an HVN(High Voltage NMOS) Tr(Transistor) area. A method for manufacturing a flash memory device includes the steps of: forming a gate structure on the upper part of each area of a semiconductor substrate(21) composed of a high voltage transistor area and an area except the high voltage transistor area; forming a spacer on the side wall of the gate structure; forming a buffer oxide film(30) on the whole surface including the gate structure; forming an open prevention pattern(31a) only on the upper part of the buffer oxide film(30) of the high voltage transistor area; forming a polishing stop layer on the whole surface including the open prevention pattern(31a); forming an interlayer insulation layer(35) on the upper part of the polishing stop layer; and planarizing the interlayer insulation layer(35).</p> |
