发明名称 APPARATUS FOR GENERATING ION AT THE IMPLANTER
摘要 An apparatus for generating an ion at an implanter is provided to form a concave-convex on a cross section of a cap, thereby increasing the efficiency of power supply voltage applied in a filament or a cathode cap, and increasing or maximizing the productivity. An apparatus for generating an ion at an implanter includes a chamber(210) which is separated from external pollution source and provides predetermined airtight space, a reacting gas provider, a filament(230) which is formed in one side inner wall of the chamber(210) and produces a thermo-electron with power supply voltage applied from an outside for making the reacting gas to an ion state, and a cathode cap(240) whose cross section re-emitting the thermo-electron has a concave-convex(242).
申请公布号 KR20070097661(A) 申请公布日期 2007.10.05
申请号 KR20060027834 申请日期 2006.03.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, SANG HYUN
分类号 H01L21/265 主分类号 H01L21/265
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