PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

摘要

A plasma processing apparatus and a plasma processing method are provided to improve uniformity of a process by arbitrarily controlling a spatial distribution characteristic of the plasma density while completely preventing formation of an undesired film on an opposed electrode. A plasma processing apparatus includes a capacitively coupled(parallel plate type) plasma etching device using a lower dual frequency superimposed application method. A substrate(W) is mounted on a susceptor(16). A primary high frequency for generating plasma is applied to the susceptor(16) from a high-frequency power source(30) and a secondary high-frequency for injecting ion is applied to the susceptor(16) from a high-frequency power source(70). An upper electrode(34) is attached to a chamber(10) via a ring-shaped insulator(35). The upper electrode(34) is connected to a ground potential via an inductor(54) and a conducting wire(56).