| 摘要 |
An apparatus for processing plasma and a method for processing the plasma are provided to improve the uniformity inside a surface of a process by voluntarily controlling the spatial distribution of plasma density. An apparatus for processing plasma includes a processing container(10), a first electrode, a second electrode, a processing gas supplying unit, and a first high frequency feeding power unit. The processing container(10) forms a vacuum by being exhausted. The first electrode is attached in a state of electrically floating through an insulator and a space inside the processing container(10). The second electrode supports a substrate to be processed by being opposite to the first electrode. The processing gas supplying unit supplies processing gas to a processing space between the first electrode and a side wall of the second electrode and the processing container(10). The first high frequency feeding power unit applies a first high frequency to the second electrode to generate the plasma of the processing gas on the processing space.
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