| 摘要 |
A method for forming a chemical material and selecting a wafer is provided to reduce an error rate of a semiconductor manufacturing process by preventing amorphous defects from being formed on or near to an edge of the wafer. Two wafers are provided(31). One of the wafers is attached to the other wafer. ERO(Edge Roll Off) values for the respective wafers are determined(33) by using a second order differentiation of profiles of the respective wafers. A wafer having an ERO between 50nm and 100nm or specifically greater than 150nm is used(35). ERO is calculated according to an equation, ERO=Y(a)-Y(fqa), where a and fqa represent two points on a radius of the wafer, respectively. Y(a) represents a height of the wafer at a first position. Y(fqa) represents a height of the wafer at a second position.
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