| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to obtain stable and constant element isolation without forming an oxide liner or the like on the inner wall of an isolation groove, to ensure sufficient adhesion of an insulator put into the isolation groove, and also to achieve constant high element isolation and uniform and sufficient adhesion of the embedded insulator even if a large-dia. semiconductor substrate is applied. SOLUTION: After a thermal oxide film 4 is formed on the inner wall surface of an isolation groove 3, a silicon semiconductor substrate 1 is heated by a lamp annealing apparatus, at higher temperature than during the formation of the thermal oxide film 4, for example, at 950°C for a short time (30 seconds in this case). Thus, at least a surface layer of the thermal oxide film 4 is made further rigid and uniform in oxidation state. COPYRIGHT: (C)2008,JPO&INPIT
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