发明名称 Sol-gel and mask patterning for thin-film capacitor fabrication, thin-film capacitors fabricated thereby, and systems containing same
摘要 A process of forming a thin-film capacitor that includes sol-gel patterning of a dielectric thin film on a first electrode, lift-off removal of unwanted dielectric thin film, and mating the dielectric thin film with a second electrode. The thin-film capacitor exhibits a substantially uniform heat-altered morphology along a line defined by a characteristic dimension thereof. A computing system is also disclosed that includes the thin-film capacitor.
申请公布号 US2007228517(A1) 申请公布日期 2007.10.04
申请号 US20060396386 申请日期 2006.03.31
申请人 发明人 SEH HUANKIAT;MIN YONGKI;PALANDUZ CENGIZ A.
分类号 H01L29/00;H01L21/00 主分类号 H01L29/00
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