发明名称 |
Semiconductor memory device and method of operating a semiconductor memory device |
摘要 |
A semiconductor memory device includes a channel region, a gate electrode adjacent the channel region, and a charge-trapping layer between the channel region and the gate electrode. A voltage is applied between the gate electrode and the channel region to cause a first current of a first kind of charge carriers from the channel region to move into the charge-trapping layer and to cause a second current of a second kind of charge carriers from the gate electrode to move into the charge-trapping layer, until the value of the second current is at least half the amount of the first current value.
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申请公布号 |
US2007231991(A1) |
申请公布日期 |
2007.10.04 |
申请号 |
US20060396398 |
申请日期 |
2006.03.31 |
申请人 |
WILLER JOSEF;NAGEL NICOLAS;MIKOLAJICK THOMAS;KUESTERS KARL-HEINZ |
发明人 |
WILLER JOSEF;NAGEL NICOLAS;MIKOLAJICK THOMAS;KUESTERS KARL-HEINZ |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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