| 摘要 |
A gold/silicon eutectic die bonding method is disclosed. The method includes the steps of 1) vacuum evaporating a layer of titanium to a silicon wafer backside, the titanium layer having a thickness less than 200 Å, 2) immediately vacuum evaporating a layer of gold onto the titanium layer, the gold layer having a thickness in the range of 0.5 to 1.5 microns, 3) dicing the wafer, and 4) mounting the die onto a substrate at a eutectic temperature to form a gold/silicon eutectic alloy bond.
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