COLORLESS SINGLE-CRYSTAL CVD DIAMOND AT RAPID GROWTH RATE
摘要
The present invention relates to a method for producing colorless, single-crystal diamonds at a rapid growth rate. The method for diamond production includes controlling temperature of a growth surface of the diamond such that all temperature gradients across the growth surface of the diamond are less than about 20 0C, and growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface of a diamond at a growth temperature in a deposition chamber having an atmosphere, wherein the atmosphere comprises from about 8 % to about 20 % CH4 per unit of H2 and from about 5 to about 25 % O2 per unit of CH4. The method of the invention can produce diamonds larger than 10 carats. Growth rates using the method of the invention can be greater than 50 µm/hour.
申请公布号
WO2006127611(A3)
申请公布日期
2007.10.04
申请号
WO2006US19752
申请日期
2006.05.23
申请人
CARNEGIE INSTITUTION OF WASHINGTON;HEMLEY, RUSSELL, J.;MAO, HO-KWANG;YAN, CHIH-SHIUE