| 摘要 |
<p>Disclosed is an electroless plating liquid which is used for selectively forming a protection film on the surface of exposed wiring during production of a semiconductor device having a wiring structure. This electroless plating liquid is characterized by containing cobalt ions, ions of a second metal other than cobalt, a chelating agent, a reducing agent, a surface active agent and a specific tetraalkylammonium hydroxide. The electroless plating liquid is further characterized in that the surface active agent is composed of a substance selected from the group consisting of a compound represented by the formula (2a) or (2b) below, a sulfonic acid type anionic surface active agent, a polyoxyethylene alkyl ether phosphoric acid ester, and a polyoxyalkylene monoalkyl ether. (In the formulae, R<SUP>5</SUP>-R<SUP>8</SUP> respectively represent a hydrogen atom or a specific alkyl group; R<SUP>9</SUP> and R<SUP>10</SUP> respectively represent an alkylene group having 2-5 carbon atoms; and J and k independently represent an integer of not less than 1, with the sum of j and k being 2-50.) The electroless plating liquid enables to uniformly form a protection film having a diffusion-preventing ability on copper wiring with high selectivity.</p> |
