RADIATION-HARDENED MEMORY ELEMENT WITH MULTIPLE DELAY ELEMENTS

摘要

A radiation hardened memory element (130) includes at least two delay elements (24, 132) for maintaining radiation hardness. In an example, the memory element (130) is an SRAM cell. Both delays (24, 132) are coupled together in series so that if either one of the delays fails, a delay will still be maintained within the SRAM cell. The critical areas (24, 132) of the delays may be positioned so that a common line of sight cannot be made between each delay and a circuit node.