METHOD FOR FORMING INTER METAL DIELECTRIC LAYER IN SEMICONDUCTOR DEVICE

摘要

A method for forming an interlayer dielectric of a semiconductor device is provided to simplify interlayer dielectric forming processes by trapping F radicals generated from an FSG(Fluorine Silicate Glass) using a USG(Undoped Silicate Glass) layer obtained from in-situ process. A metal line layer for being electrically connected with a contactor is formed on an interlayer dielectric(S200). A USG liner layer is deposited on the metal line layer(S202). An FSG layer is deposited on the USG liner layer by a first in-situ process(S204). A USG capping layer is formed on the FSG layer by a second in-situ process(S206). A planarization process is performed on the resultant structure(S208).