METHOD OF FORMING A FERROELECTRIC LAYER AND METHOD OF MANUFACTURING A FERROELECTRIC CAPACITOR

摘要

A method of forming a ferroelectric film and a method of manufacturing a ferroelectric capacitor using the same are provided to improve data retention characteristics of the ferroelectric film and to improve leakage current characteristics by preventing the generation of an unwanted impurity layer on the ferroelectric film due to the reaction of a residual gas on an oxygen gas using a second inert gas. At least one out of a predetermined gas containing oxygen or a first inert gas and a carrier gas are supplied into a reaction chamber in a predetermined flow rate range of 2.5 : 1.0 to 3.5 : 1.0(S20). A substrate is loaded into the reaction chamber and a ferroelectric film is formed on the substrate(S30). A second inert gas is supplied onto the ferroelectric layer while the substrate is unloaded from the reaction chamber(S40).