| 摘要 |
A test pattern group for measuring a leakage current of a semiconductor device and a method for forming the same are provided to measure variations of a leakage current values according to misalignment between a via hole and an active region. Each of test patterns includes plural active regions, and the active region has a structure corresponding to a via hole(26). Between the test patterns, a ratio of a cross-sectional area to an area of the active is varied depending upon the test pattern. A length of one of x-axis or y-axis direction of the active region is varied depending upon the test pattern, so that the area of the active region is varied.
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