| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent a resist residue from occurring when peeling off a plating resist film for columnar-electrode formation in a semiconductor device called as a CSP. <P>SOLUTION: At first, electrolytic plating is executed in a state in which a plating resist film 23 for wiring formation composed of a positive liquid resist of a novolak-based resin is made to remain as it is. Consequently, a columnar electrode 9 is formed on a connection pad of a wiring 8 in a first opening 26 of a plating resist film 25 for columnar-electrode formation composed of a negative dry film resist of an acrylic resin. Next, both of the plating resist films 23, 25 are simultaneously peeled off by using a monoethanolamin-based resist stripper. In this case, a planar peeling-area of the plating resist film 25 for columnar-electrode formation is reduced by the existence of a second opening 27 formed at a part corresponding to a dicing line 22, while expanding a surface area to be immersed into the resist stripper so as to facilitate the peeling-off of the plating resist film for columnar-electrode formation. <P>COPYRIGHT: (C)2008,JPO&INPIT |
