SEMICONDUCTOR DEVICE, AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To effectively attain an improvement of current characteristics in a semiconductor device including an n-type MIS transistor with a channel lengthwise direction set in a crystal axis (100) direction. SOLUTION: An active region 1 for construction of the MIS transistor and an element isolation region 2 surrounding the active region 1 are formed on a surface region of a silicon semiconductor substrate taking crystal plane (100) as a principal surface. A gate insulating film 7 and a gate electrode 3 are formed on the active region 1. A stress control film 5 having a tensile stress is formed on the active region 1 and the gate electrode 3. Portions of the stress control film 5 located at both sides in a gate widthwise direction from a channel region 8 form a stress control film working region 6. The stress control working region 6 means a region of non-installation of the stress control film 5 or a region of the stress control film 5 formed with a film thinner than other regions. COPYRIGHT: (C)2008,JPO&INPIT