发明名称 MAGNETRON TYPE SPUTTERING DEVICE, AND FILM DEPOSITION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a magnetron type sputtering device, and a film deposition method capable of efficiently forming a pattern of high quality when depositing a thin film having a predetermined pattern on a surface of a base material for depositing the thin film such as a polymer film by the sputtering method. SOLUTION: The magnetron type sputtering device comprises a cylindrical magnetron type rotary cathode target in which a magnetic field generating means and a cooling means are installed inside and a sputter material layer is formed on an outer circumferential surface, and a cylindrical mask member having apertures formed in a predetermined pattern on an outer circumferential surface and installed separate from the target so as to surround the outer circumference of the target. The magnetron type sputtering device deposits a thin film having a predetermined pattern on a surface of a base material for depositing the thin film by arranging the base material for depositing the thin film on the outer circumferential surface of the mask member, cooling the inside of the target by the cooling means, and performing the discharge while rotating the target around the axis of the cylinder. This film deposition apparatus is used for the film deposition method. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007254790(A) 申请公布日期 2007.10.04
申请号 JP20060078239 申请日期 2006.03.22
申请人 LINTEC CORP 发明人 HOSHI SHINICHI;OKUCHI SHIGETO;SEKIYA MASAHIKO
分类号 C23C14/56;C23C14/35;H01L51/50;H05B33/10;H05B33/14;H05K3/16 主分类号 C23C14/56
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