发明名称 Method of forming damascene structure
摘要 A method for forming a damascene structure utilizes dual hard mask layers and a thin etch stop layer, and does not require a sacrificial layer within the via. A floating etch stop layer can additionally be used. The dual hard masks may be formed of dielectric and neither of the hard masks is required to contain metal. The thin etch stop layer reduces capacitance problems.
申请公布号 US2007231750(A1) 申请公布日期 2007.10.04
申请号 US20060390641 申请日期 2006.03.28
申请人 APPLIED MATERIALS, INC. 发明人 PARIKH SUKETU A.
分类号 G03F7/26 主分类号 G03F7/26
代理机构 代理人
主权项
地址