发明名称 Alternating phase shift masking
摘要 An alternating phase shift mask may be formed using a dry undercut etch. The dry undercut etch reduces problems associated with wet etching of quartz or glass masks. In addition, the use of the dry undercut etch enables image balancing between the zero and pi apertures. This approach is not limited by specific optical proximity corrected design patterns or chromium layer thickness.
申请公布号 US2007231712(A1) 申请公布日期 2007.10.04
申请号 US20060394014 申请日期 2006.03.30
申请人 PANG SONG;FARNSWORTH JEFF;CHAKRAVORTY KISHORE K;YUNG KARMEN;CHAVEZ JOAS L 发明人 PANG SONG;FARNSWORTH JEFF;CHAKRAVORTY KISHORE K.;YUNG KARMEN;CHAVEZ JOAS L.
分类号 G03C5/00;G03F1/00 主分类号 G03C5/00
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