| 摘要 |
An input circuit of a semiconductor memory device includes a data input circuit and a data pattern setting circuit. The data input circuit receives first data, and generates second data by buffering the first data, sampling buffered first data responsive to a write data strobe (WDQS) signal, and parallelizing sampled data. The data pattern setting circuit sets a pattern of the second data responsive to a test mode signal and a data pattern select signal to generate third data. Accordingly, the semiconductor memory device including the input circuit may generate data of various patterns in a test mode, and may perform a high-speed test using a low-speed tester.
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