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发明名称
Verfahren zum Einbringen von Isolationsbereichen in ein Substrat und Feldisolationsstruktur in einem Halbleitersubstrat
摘要
申请公布号
DE19911977(B4)
申请公布日期
2007.10.04
申请号
DE1999111977
申请日期
1999.03.17
申请人
NATIONAL SEMICONDUCTOR CORP.(N.D.GES.D.STAATES DELAWARE)
发明人
BERGEMONT, ALBERT;OWENS, ALEXANDER H.
分类号
H01L21/762
主分类号
H01L21/762
代理机构
代理人
主权项
地址
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