| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing apparatus for controlling formation of a natural oxide film on a substrate. SOLUTION: The processing apparatus 101 is provided with a processing chamber 201 for thermally processing a wafer, a heater 206 heating the inner part of the processing chamber 201, a load lock chamber 141 connected to the processing chamber 201 through a furnace port, a third gas supply source 182 supplying hydrogen gas into the processing chamber 201, a furnace port gate valve 147 for opening/closing the furnace port, an exhaust device 300 exhausting gas in the load lock chamber 141 and a controller 240. The controller 240 opens the furnace port gate valve 147, supplies gas by the third gas supply source 182, and discharges gas by the exhaust device 300 in a state where the inner part of the processing chamber 201 is heated to a prescribed temperature. Thus, a wall face in the load lock chamber 141 is heated with gas heated in the processing chamber 201. COPYRIGHT: (C)2008,JPO&INPIT
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