| 摘要 |
A semiconductor device in which potential is uniformly controlled and in which the influence of noise is reduced. A p-type well region is formed beneath a surface of a p-type Si substrate. n-type MOS transistors are formed on the p-type well region. An n-type well region is formed in the p-type Si substrate so that it surrounds the p-type well region. A plurality of conductive regions which pierce through the n-type well region are formed at regular intervals. By doing so, parasitic resistance from the p-type Si substrate, through the plurality of conductive regions, to the n-type MOS transistors becomes low. Accordingly, when back bias is applied to a contact region, the back bias potential of the n-type MOS transistors can be controlled uniformly. As a result, the influence of noise from the p-type Si substrate or the p-type well region can be reduced.
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