发明名称 RESIST MATERIAL AND PATTERN FORMING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a resist material which is used as a chemically amplified positive resist material and has high resolution and excellent adhesiveness with a substrate and giving a pattern with low roughness on a side wall after development. <P>SOLUTION: The resist material comprises: (A) a polymer compound containing a repeating unit having a group which reacts with an acid to produce a polar group soluble with an alkali developer, a repeating unit produced by cyclization polymerization of fluorine-containing dienes expressed by formula (1):CF<SB>2</SB>=CFCF<SB>2</SB>C(CF<SB>3</SB>)(OH)CH<SB>2</SB>CH=CH<SB>2</SB>and/or formula (2):CF<SB>2</SB>=CFCH<SB>2</SB>CH(C(CF<SB>3</SB>)<SB>2</SB>OH)CH<SB>2</SB>CH=CH<SB>2</SB>, and a repeating unit based on a monomer selected from monomers expressed by formulae (3) to (7); (B) an acid generating compound; and (C) an organic solvent. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007256448(A) 申请公布日期 2007.10.04
申请号 JP20060078655 申请日期 2006.03.22
申请人 SHIN ETSU CHEM CO LTD 发明人 TACHIBANA SEIICHIRO;NISHI TSUNEHIRO;NAGURA SHIGEHIRO;KANOU TAKESHI
分类号 G03F7/039;C08F220/10;H01L21/027 主分类号 G03F7/039
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