| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device on which a semiconductor is grown epitaxial with high selectivity, and to provide a manufacturing method of the semiconductor device for epitaxial-growing the semiconductor at high selectivity. SOLUTION: A semiconductor device 100 comprises a gate electrode 12 which is formed on an Si substrate 10, a semiconductor substrate via a gate insulating film 11, and an insulating layer 17, comprising halogen element which is formed on the side surface of the gate electrode 12. In the semiconductor device 100 such as this, a silicon nitride film 17c containing halogen element is formed on the side surface of the gate electrode 12, when an SiGe layer 14 is formed on the Si substrate 10. So, the SiGe layer 14 is grown epitaxially on the Si substrate 10 with high selectivity. As a result, an off-leakage current, for example, generated between the gate electrode 12 and a source-drain region 13 is suppressed, establishing a manufacturing process that corresponds to an actual mass production. COPYRIGHT: (C)2008,JPO&INPIT |
