| 摘要 |
PROBLEM TO BE SOLVED: To provide a new Si-containing film-forming material, particularly a Si-containing film-forming material comprising alkyl silane compound suitable for a PECVD apparatus. SOLUTION: A Si-containing film is produced by a PECVD method using a Si-containing film-forming material comprising an organic silane compound having a structure in which at least one cyclopropyl group is directly bonded to a silicon atom (specific example: 2,4,6-tricyclopropyl-2,4,6-trimethylcyclotrisiloxane). The Si-containing film is used as an insulating film for a semiconductor device. COPYRIGHT: (C)2008,JPO&INPIT |
