发明名称 METHOD OF FABRICATING PHOTORESIST THINNER
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of fabricating photoresist thinner. <P>SOLUTION: A photoresist material and a first photoresist thinner are provided. The first photoresist thinner is suitable for thinning the photoresist material. The first photoresist thinner comprises a plurality of first solvents each having a first Hansen parameter. The photoresist material has a second Hansen parameter. A first region is defined according to the first Hansen parameters. A plurality of second solvents is selected according to the first Hansen parameters of the first solvents. Each second solvent has a third Hansen parameter corresponding to at least one of the first solvents. The second solvents are mixed to form a second photoresist thinner. The second photoresist thinner has a fourth Hansen parameter located within the first region. Therefore, the cost of the photoresist thinner can be reduced. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007256912(A) 申请公布日期 2007.10.04
申请号 JP20060315106 申请日期 2006.11.22
申请人 AU OPTRONICS CORP 发明人 CHOU LI-TSANG;CHEN I-CHERNG
分类号 G03F7/004;H01L21/027 主分类号 G03F7/004
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