| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which the on-state resistance of a field effect transistor employing heterojunction is reduced, and to provide its fabrication process. SOLUTION: In the semiconductor device of field effect transistor having a heterosemiconductor region 8 forming a heterojunction with a drain region 2 formed on a substrate region 1, and a gate electrode 11 arranged contiguously to the junction end of the heterosemiconductor region 8 and the drain region 2 through a gate insulating film 9, a trench having a bottom becoming the heterojunction interface of the drain region 2 and the heterosemiconductor region 8 is formed above the drain region 2, the heterosemiconductor region 8 is formed in the shape of sidewall on the sidewall of the trench by anisotropic etching, and the drive point of the transistor is formed in a region where the gate insulating film 9, the heterosemiconductor region 8 and the drain region 2 touch each other. COPYRIGHT: (C)2008,JPO&INPIT
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