| 发明名称 |
Method to manipulate post metal etch/side wall residue |
| 摘要 |
A method of semiconductor manufacturing to treat sidewall residue such that the side wall remains substantially vertical or peels back from the resist prior to removal of the resist by ashing or other means.
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| 申请公布号 |
US2007227555(A1) |
申请公布日期 |
2007.10.04 |
| 申请号 |
US20060397836 |
申请日期 |
2006.04.04 |
| 申请人 |
JOHNSON MICHAEL R;CRUMP TIMOTHY A JR |
发明人 |
JOHNSON MICHAEL R.;CRUMP TIMOTHY A.JR. |
| 分类号 |
B08B6/00;B08B3/00;C23G1/00 |
主分类号 |
B08B6/00 |
| 代理机构 |
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代理人 |
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