| 摘要 |
The invention relates to a thermoelectrically active p- or n-conductive semiconductor material constituted by a compound of the general formula (I) <?in-line-formulae description="In-line Formulae" end="lead"?>(PbTe)<SUB>1-x</SUB>(Sn<SUB>2±y</SUB>Sb<SUB>2±z</SUB>Te<SUB>5</SUB>)<SUB>x </SUB> (I) <?in-line-formulae description="In-line Formulae" end="tail"?> with 0.0001<=x<=0.5, 0<=y<2 and 0<=z<2, wherein 0 to 10% by weight of the compound may be replaced by other metals or metal compounds, wherein the semiconductor material has a Seebeck coefficient of at least |S|>=60 muV/K at a temperature of 25° C. and electrical conductivity of at least 150 S/cm and power factor of at least 5 muW/(cm.K<SUP>2</SUP>), further relates to a process for the preparation of such semiconductor materials, as well as to generators and Peltier arrangements containing them.
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