HIGH-FREQUENCY SWITCHING CIRCUIT AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a high-performance high-frequency switching circuit capable of reasonably increasing input power while suppressing harmonic distortion and insertion loss of a FET. SOLUTION: A basic switching part (switching circuit) constituted of FETs connected in many stages is provided between an input/output terminal and a ground terminal or between input and output terminals, and gate width of an FET on the side of the input/output terminal to which signal power is impressed when the basic switching part is in an off state among a plurality of FETs included in one basic switching part is set larger than gate width of the remaining FET at a farther place from the input/terminal. COPYRIGHT: (C)2008,JPO&INPIT