| 摘要 |
PROBLEM TO BE SOLVED: To minimize the area of an insulated separation region of a dielectric separated type semiconductor device, and to avoid the increase of ON-resistance. SOLUTION: In the dielectric separated type semiconductor device, the impurity concentration of the inside of a well region, in which the inversion layer of an MOS (metal oxide semiconductor) transistor or a channel is formed, is higher than that in the surface thereof, and the well region is contacted with a drain region of low impurity concentration. A depletion layer, formed on impressing the drain voltage, is suppressed so as to be narrow and short-channel effect will not be caused; and even when the source region is made to further approach the drain region, the MOS transistor, having a short gate length, is available whereby the transfer conductance gm can be increased, and the gate width can be contracted. COPYRIGHT: (C)2008,JPO&INPIT
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