| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a compound semiconductor capable of improving the quality of each thin film layer constituting a laminated structure. SOLUTION: There is made not existent any one (including attachments, deposits, etc.) other than those relating to stock material gases used in vapor phase growing chambers 6a, 6b in the vapor phase growing chambers 6a, 6b, by crystal growing each thin film layer on a silicon substrate 2 in succession in first and second exclusive vapor phase growing chambers 6a, 6b associated with the each thin film layer. Consequently, the quality of a second thin film layer is prevented from being lowered owing to unexpected reaction of the stock gases or the like for the first and second thin film layers. Further, a conveyance space 35 of the silicon substrate 2 is made a nitrogen atmosphere or a vacuum for suppressing oxidation to restrain any oxide from being produced in a first thin film layer that is an outermost layer at that time upon conveyance of the silicon substrate 2. COPYRIGHT: (C)2008,JPO&INPIT
|
