发明名称 SEMICONDUCTOR MEMORY DEVICE TESTING ON/OF STATE OF ODT CIRCUIT DURING DATA READ MODE AND TEST METHOD OF STATE OF ODT CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory device which tests the on/off state of a ODT circuit during a data read mode, and also to provide a test method of the state of the ODT circuit. SOLUTION: The semiconductor memory device is provided with an ODT circuit and an ODT state information output unit. The ODT circuit includes at least one ODT resistor. The ODT state information output unit outputs an ODT state information signal indicating whether the ODT circuit is on/off in response to an ODT control signal during a data read mode when data are output from memory cells. Thus, with the semiconductor memory device and the method for testing whether the ODT resistor is on/off during the data read mode, whether the ODT circuit is on/off during reading of data is tested. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007257822(A) 申请公布日期 2007.10.04
申请号 JP20070068985 申请日期 2007.03.16
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 LEE HYONG-YONG
分类号 G11C11/401 主分类号 G11C11/401
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