| 摘要 |
PROBLEM TO BE SOLVED: To provide a metal raw material suitable for forming a thin film comprising a group 13 metal. SOLUTION: A raw material for forming the thin film comprises aβ-diketone metal complex represented by chemical formula ML<SB>3</SB>(wherein, M represents a group 13 atom; and L represents an octane-2,4-dione residue, a 2,2-dimethyl-6-ethyldecane-3,5-dione residue or a 2,2,6,6-tetramethyl-1-(2-methoxyethoxy)heptane-3,5-dione residue). A method for producing the thin film by a chemical vapor deposition method using the raw material is provided. COPYRIGHT: (C)2008,JPO&INPIT
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