发明名称 INSULATING FILM AND SEMICONDUCTOR DEVICE
摘要 An insulating film includes an oxide of a metal selected from Hf and Zr, the oxide being doped by at least one of Ba, Sr and Mg. And the insulating film satisfies the following formula (1): <?in-line-formulae description="In-line Formulae" end="lead"?>0.06 at %<=[Ba]+[Sr]+[Mg]<=1.4 at % (1) <?in-line-formulae description="In-line Formulae" end="tail"?> wherein [Ba] represents atomic % of Ba, [Sr] represents atomic % of Sr, and [Mg] represents atomic % of Mg.
申请公布号 US2007228526(A1) 申请公布日期 2007.10.04
申请号 US20070689212 申请日期 2007.03.21
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SHIMIZU TATSUO;FUKUSHIMA NOBURU
分类号 H01L23/58 主分类号 H01L23/58
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