发明名称 Semiconductor memory device
摘要 A semiconductor memory device operating using initialization data, includes a first latch circuit which latches the initialization data, a memory cell array including a plurality of memory cells and having a first region and a second region, the first region storing data, and a buffer circuit having a function for accessing the first latch circuit, the buffer circuit transferring, to the second region, the initialization data transferred from the first latch circuit, and transferring, to the first latch circuit, the initialization data transferred form the second region.
申请公布号 US2007230255(A1) 申请公布日期 2007.10.04
申请号 US20060487514 申请日期 2006.07.17
申请人 FUKUDA RYO 发明人 FUKUDA RYO
分类号 G11C7/00 主分类号 G11C7/00
代理机构 代理人
主权项
地址