发明名称 Method of manufacturing epitaxial silicon wafer
摘要 A role of a bottom face of a silicon wafer is identified in a manufacturing process of the silicon wafer. And preferable characteristic feature is also identified. In order to obtain the above characteristic feature, a process method to be implemented into the method of manufacturing a normal silicon wafer is provided. For example, the method comprises: a pre-cleaning process for cleaning the silicon wafer having top and bottom faces processed to a mirror finish; and a rapid thermal process or an epitaxial growth process, wherein the pre-cleaning process comprises a hydrofluoric acid (HF) process and a subsequent pure water (DIW) process.
申请公布号 US2007228524(A1) 申请公布日期 2007.10.04
申请号 US20070731268 申请日期 2007.03.30
申请人 SUMCO TECHXIV CORPORATION 发明人 HAYASHIDA KOICHIRO;NARAHARA KAZUHIRO;KATO HIROTAKA
分类号 H01L29/06 主分类号 H01L29/06
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