| 摘要 |
<p>1,069,520. Semi-conductor devices. SIEMENS-SCHUCKERTWERKE A.G. July 21, 1965 [July 25, 1964], No. 31101/65. Heading H1K. A semi-conductor element 4 is mounted between two metal (e.g. silver) foils 2 and surrounded by an insulating ring which is secured to the edge regions of the two metal foils and which consists at least partially of a cured silicone bonding agent. The insulating ring may consist of two component rings connected together by an intermediate layer 6 of cured silicone-bonding agent, the component rings possibly being of a ceramic material 5 (such as sintered aluminium oxide) hard-soldered to the respective foils 2, as shown, fig. 1, or of a plastic material 7, such as powdered quartz or asbestos with a cured silicone bonding agent as a binder, cast around the edges of the respective foils, Fig. 2 (not shown). Alternatively, the insulating ring may be cast in one piece around the edges of the foils, Fig. 3 (not shown), and consist of a mixture of cured silicone bonding agent and a finely divided filler, such as powdered quartz. The semi-conductor element 4 may be alloyed to molybdenum carrier plates 3.</p> |
