| 摘要 |
A contact structure of an image sensor device and its manufacturing method are provided to prevent a boundary portion of an isolation film of a logic region from being excessively etched in an etching process of a pixel region and the logic region. A blocking nitride layer(112) is formed on a gate electrode(106) and a source/drain region(110) of a pixel region(A). A silicide layer(114) is formed on a gate electrode or source/drain region of a logic region(B). An etch stop layer(116) and an interlayer dielectric(118) are formed on the entire surface of the substrate. A contact is connected to the source/drain region through a contact hole(122a) of the interlayer dielectric, the etch stop layer and the blocking nitride in the pixel region. A contact is connected to the silicide layer through a contact hole(122b) of the interlayer dielectric and the etch stop layer in the logic region.
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