| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a dielectric device exhibiting higher performance. <P>SOLUTION: The dielectric device 10 is composed of a board 11, a lower electrode 12, a dielectric layer 13, and an upper electrode 14. The lower electrode 12 is fixed on the board 11, and the dielectric layer 13 is fixed on the lower electrode 12. The dielectric layer 13 is formed by subjecting a film-deposition layer to a heat treatment, and the film-deposition layer is obtained by jetting a powdered dielectric and a particulate metal. In the film-deposition layer, the metal particles are dispersed in a matrix of the powdered dielectric, and heat treatment on the film-deposition layer causes the metal particles to migrate in the film-deposition layer. This migration of the metal particles results in a difference in metal content rate between a lower electrode vicinity 13c and an upside surface vicinity 13d in the dielectric layer 13. <P>COPYRIGHT: (C)2008,JPO&INPIT |
