| 摘要 |
PROBLEM TO BE SOLVED: To improve the adhesiveness of an interconnection material and an interlayer insulation film while making the interconnection be low resistance. SOLUTION: A semiconductor device 100 includes a first copper content conductive film 124 formed on a substrate, insulation films 108, 110, 112, 114 formed on the first copper content conductive film 124, in which a recess to the first copper content conductive film 124 is formed; a second barrier insulation film 128 composed of a material to prevent the diffusion of copper formed so as to cover the side wall of the recess of these insulation film; a second adhered alloy film 130 of copper and a different kind of element from copper formed so as to cover the inner wall of the recess contacting the second barrier insulation film 128 with the side wall of the recess, while contacting the first copper content conductive film 124 at the bottom of the recess; and a second copper content conductive film 132 containing copper as the main component formed on the second adhered alloy film 130 embedding the recess contacting the second adhered alloy film 130. COPYRIGHT: (C)2008,JPO&INPIT |
